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www.irf.com 1 03/27/08 irf7494 hexfet power mosfet high frequency dc-dc converters benefits applications low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current notes through are on page 8 so-8 top view 8 12 3 4 5 6 7 d d d d g s a s s a v dss r ds(on) max i d 150v 44m @v gs = 10v 5.2a absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation w linear derating factor w/c dv/dt peak diode recover y dv/dt v/ns t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja junction-to-ambient ( p c b mount ) ??? 50 3.0 max. 5.2 3.7 42 150 20 3.0 -55 to + 150 0.02 downloaded from: http:///
irf7494 2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown voltage 150 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.15 ??? v/c r ds(on) static drain-to-source on-resistance ??? 35 44 m v gs(th) gate threshold voltage 2.5 ??? 4.0 v i dss drain-to-source leakage current ??? ??? 10 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units gfs forward transconductance 12 ??? ??? s q g total gate charge ??? 36 54 q gs gate-to-source charge ??? 7.5 ??? nc q gd gate-to-drain ("miller") charge ??? 13 ??? t d(on) turn-on delay time ??? 15 ??? t r rise time ???13??? t d(off) turn-off delay time ??? 36 ??? ns t f fall time ???14??? c iss input capacitance ??? 1750 ??? c oss output capacitance ??? 220 ??? c rss reverse transfer capacitance ??? 100 ??? pf c oss output capacitance ??? 870 ??? c oss output capacitance ??? 120 ??? c oss eff. effective output capacitance ??? 170 ??? avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a diode characteristics parameter min. t y p. max. units i s continuous source current ??? ??? 2.7 (body diode) a i sm pulsed source current ??? ??? 42 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 55 ??? ns q rr reverse recovery charge ??? 140 ??? nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 20v v gs = -20v max. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 120v, ? = 1.0mhz v gs = 0v, v ds = 0v to 120v v gs = 10v v dd = 75v i d = 3.1a r g = 6.5 t j = 25c, i s = 3.1a, v gs = 0v t j = 25c, i f = 3.1a, v dd = 25v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 3.1a v ds = v gs , i d = 250a v ds = 120v, v gs = 0v v ds = 120v, v gs = 0v, t j = 125c mosfet symbol showing the integral reverse p-n junction diode. conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz 370 3.1 typ. ??? ??? conditions v ds = 50v, i d = 5.2a i d = 3.1a v ds = 75v downloaded from: http:///
irf7494 www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature downloaded from: http:///
irf7494 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area downloaded from: http:///
irf7494 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 9. maximum drain current vs. ambient temperature 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0. 50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a downloaded from: http:///
irf7494 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 1k vcc dut 0 l q g q gs q gd v g charge downloaded from: http:///
irf7494 www.irf.com 7 so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking

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irf7494 8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 77mh, r g = 25 , i as = 3.1a. when mounted on 1 inch square copperboard, t 10 sec. pulse width 400s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . i sd 3.1a, di/dt 270a/s, v dd v (br)dss , t j 175c. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/08 data and specifications subject to change without notice. this product has been designed and qualified for the industria l market. qualification standards can be found on ir?s web site. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches)

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